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MJE13009 - onsemi

Description: 12 A, 400 V NPN Bipolar Power Transistor

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MJE13009 - onsemi  - 3D model
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MJE13009 Details

  • Manufacturer Part Number:

    MJE13009

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    12 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    6

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJE13009 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE13009 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage and current ratings. A safe operating area curve can be obtained from onsemi's application notes or by consulting with their technical support team.
  • To ensure the MJE13009 is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.7V, and the collector-emitter voltage (VCE) should be set to at least 1V. The base current should be limited to prevent saturation, and the collector current should be limited to prevent overheating. A resistor network can be used to set the base voltage and current.
  • For optimal thermal management, the MJE13009 should be mounted on a heat sink or a PCB with a large copper area to dissipate heat. The transistor should be placed near a thermal vias or a heat sink to improve heat dissipation. A recommended PCB layout would be to place the transistor near the edge of the board, with a large copper area underneath, and thermal vias connecting to a heat sink or a metal plate.
  • To protect the MJE13009 from electrostatic discharge (ESD), it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage. During PCB assembly, ESD-sensitive components should be installed last, and the board should be grounded during handling. Additionally, ESD protection diodes or resistors can be added to the circuit to protect the transistor from voltage spikes.
  • The MJE13009 should be stored in a dry, cool place, away from direct sunlight and moisture. The device should be handled with clean, dry gloves, and should not be exposed to temperatures above 150°C or below -40°C. The device should be stored in its original packaging or in a sealed bag with desiccant to prevent moisture absorption.

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MJE13009 Overview

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Part Image MJE13009 Semiconductor Technology Inc

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Part Image MJE13009 Mospec Semiconductor Corp

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Part Image MJE13009 Central Semiconductor Corp

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Part Image MJE13009 NXP Semiconductors

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Part Image MJE13009 Baneasa SA

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For a full list of alternate parts for MJE13009, check out Findchips.com