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MJE803G - onsemi

Description: Choice of Packages - MJE700 and MJE800 series; Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication; High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc; Pb-Free Packages are Available

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Part Number

Model

MJE803T Mospec Semiconductor Corp

Power Bipolar Transistor, 4A I(C), NPN

MJE803 General Transistor Corp

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

MJE803T Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

MJE803 STMicroelectronics

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin


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Image	Part Number	Model
	MJE803T Mospec Semiconductor Corp Power Bipolar Transistor, 4A I(C), NPN
	MJE803 General Transistor Corp Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
	MJE803T Central Semiconductor Corp Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
	MJE803 STMicroelectronics Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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MJE803G - onsemi

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