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MMBD1203 - onsemi

Description: MMBD1203, Small Signal Diode, Small Signal Diode 0.2A max, 100V 4ns Cathode-Anode, Dual, 3-Pin, SOT-23

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PCB Footprints
MMBD1203 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)-3
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MMBD1203 - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)-3
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MMBD1203 Details

  • Manufacturer Part Number:

    MMBD1203

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.1

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    100 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.35 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    50 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBD1203 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MMBD1203 is typically defined by the voltage and current ratings. The maximum collector-emitter voltage (Vce) is 30V, and the maximum collector current (Ic) is 1A. Operating the transistor outside of these ratings can lead to reduced reliability or even damage.
  • To ensure the MMBD1203 is properly biased for linear operation, you should ensure the base-emitter voltage (Vbe) is around 0.7V, and the collector-emitter voltage (Vce) is around 1-2V. This can be achieved by using a voltage divider network or a biasing circuit to set the base voltage. Additionally, ensure the collector current (Ic) is within the recommended range.
  • The MMBD1203 is a general-purpose transistor, and its switching frequency depends on the specific application. However, as a general guideline, the transistor can handle switching frequencies up to 100 kHz. For higher frequencies, consider using a transistor specifically designed for high-frequency applications.
  • Thermal management is crucial for the MMBD1203. Ensure the transistor is mounted on a suitable heat sink, and the ambient temperature is within the recommended range (typically up to 150°C). You can also use thermal interface materials to improve heat transfer. Monitor the transistor's junction temperature (Tj) to prevent overheating.
  • While the MMBD1203 can be used in switching regulator applications, it's not the most suitable choice. The transistor's switching characteristics and power handling capabilities may not be optimized for high-frequency switching applications. Consider using a transistor specifically designed for switching regulators, such as the MJD122 or MJD123.

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