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MMRF1312HR5 - NXP

Description: End of Life - RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 VPackage:CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm bodyProduct:MMRF1312H 900-1215 MHz, 1000 W Peak, 52 V RF LDMOS power transistor for high power military and commercial L-Band applications

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