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MMRF5014HR5 - NXP

Description: RF MOSFET Transistors 1-2690 MHz 125 W CW 50 V

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MMRF5014HR5 Details

  • Manufacturer Part Number:

    MMRF5014HR5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    150 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • Highest Frequency Band:

    S BAND

  • JESD-30 Code:

    R-CDFM-F2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    17 dB

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM NITRIDE

MMRF5014HR5 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm microstrip lines. Avoid vias and thermal pads under the device.
  • Use a bias tee or a separate bias supply to ensure a stable voltage supply. Adjust the bias voltage (Vdd) to optimize the device's efficiency, typically between 4.5V to 5.5V. Monitor the device's temperature and adjust the bias accordingly.
  • Use a heat sink with a thermal conductivity of at least 1 W/m-K. Apply a thin layer of thermal interface material (TIM) between the device and the heat sink. Ensure good airflow around the device to prevent overheating.
  • Check the PCB layout and ensure that the RF traces are properly matched and terminated. Verify the bias voltage and current. Check for any signs of overheating or thermal runaway. Use a spectrum analyzer to verify the device's output spectrum.
  • Yes, the MMRF5014HR5 can be used in a push-pull configuration to achieve higher power output. However, ensure that the devices are properly matched and biased, and that the output is properly combined using a Wilkinson combiner or a similar technique.

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MMRF5014HR5 Overview

Use the download button to access the MMRF5014HR5 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MMRF5, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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