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MRF150 - MACOM

Description: RF MOSFET Transistors 5-150MHz 150Watts 50Volt Gain 17dB

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MRF150 Details

  • Manufacturer Part Number:

    MRF150

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Pin Count:

    4

  • Manufacturer Package Code:

    CASE 211-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    MACOM

  • YTEOL:

    6.85

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    125 V

  • Drain Current-Max (ID):

    16 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    O-CRFM-F4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    RADIAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRF150 Frequently Asked Questions (FAQs)

  • The maximum SOA for the MRF150 is typically defined by the voltage and current ratings, but it's essential to consider the thermal and electrical stress on the device. A good rule of thumb is to operate within 70-80% of the maximum ratings to ensure reliability.
  • To optimize thermal performance, ensure good thermal contact between the device and the heat sink, use a thermal interface material (TIM) if necessary, and maintain a low thermal resistance (Rth) between the device and the ambient environment.
  • Use a multi-layer PCB with a solid ground plane, and ensure the device is placed close to the ground plane. Use short, wide traces for the RF signal, and keep the input and output traces separate to minimize coupling. A good grounding scheme includes a via-stitched ground plane and a low-inductance path to the heat sink.
  • Bias the MRF150 using a voltage-controlled current source, and ensure the quiescent current (Idq) is set to the recommended value (typically 100-200 mA). Use a voltage regulator or a bias-T network to provide a stable voltage supply.
  • Impedance matching is critical for optimal performance. Use a pi-network or a T-network topology, and ensure the input and output impedances are matched to 50 ohms. Consider using a simulation tool or a Smith chart to optimize the matching network.

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MRF150 Overview

Use the download button to access the MRF150 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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