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MRF1518NT1 - NXP

Description: RF MOSFET Transistors RF LDMOS FET PLD1.5N

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MRF1518NT1 - NXP PCB footprint - Other - Other - MRF1518NT1-3
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MRF1518NT1 - NXP  - 3D model - Other - MRF1518NT1-3
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MRF1518NT1 Details

  • Manufacturer Part Number:

    MRF1518NT1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    4 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.5 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRF1518NT1 Frequently Asked Questions (FAQs)

  • The MRF1518NT1 is designed to operate up to 1.8 GHz, making it suitable for various wireless communication systems, including cellular, Wi-Fi, and Bluetooth applications.
  • To optimize the layout and matching network, it's recommended to follow the recommended PCB layout and footprint provided in the datasheet, and use simulation tools such as ADS or AWR to optimize the matching network for maximum power transfer and efficiency.
  • The recommended biasing scheme for the MRF1518NT1 is a voltage-controlled biasing scheme, where the gate voltage is controlled by an external voltage source. The datasheet provides a recommended biasing scheme, but it's recommended to consult with NXP's application notes and technical support for specific guidance.
  • Thermal management is critical for the MRF1518NT1, as it can operate at high temperatures. It's recommended to use a heat sink or thermal pad to dissipate heat, and to ensure good airflow around the device. The datasheet provides thermal resistance values to help with thermal design.
  • The MRF1518NT1 has built-in ESD protection, but it's still important to follow proper ESD handling precautions, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. It's also recommended to follow NXP's guidelines for ESD handling and storage.

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MRF1518NT1 Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image MRF1518NT1 Freescale Semiconductor

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