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MRFE6VP5150NR1 - NXP

Description: RF MOSFET Transistors SSL MATRIX CONTROLLER

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MRFE6VP5150NR1 Details

  • Manufacturer Part Number:

    MRFE6VP5150NR1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TO-270WB, 4 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    133 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.8 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-270

  • JESD-30 Code:

    R-PDFM-F4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    25 dB

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VP5150NR1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MRFE6VP5150NR1 is -40°C to +150°C.
  • To optimize performance, ensure proper thermal management, use a low-loss PCB material, and optimize the input and output matching networks. Additionally, consider using a heat sink and thermal interface material to reduce thermal resistance.
  • The recommended PCB layout and spacing for the MRFE6VP5150NR1 include using a 4-layer PCB with a solid ground plane, keeping the RF traces as short as possible, and maintaining a minimum spacing of 10 mils between the device and other components.
  • To handle the high voltage and current requirements of the MRFE6VP5150NR1, use a suitable power supply and ensure that the PCB is designed to handle the high currents and voltages. Additionally, consider using voltage regulators and current limiters to prevent damage to the device.
  • Key considerations for thermal design and heat sinking for the MRFE6VP5150NR1 include using a heat sink with a high thermal conductivity, applying a thermal interface material, and ensuring good airflow around the device.

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MRFE6VP5150NR1 Overview

Use the download button to access the MRFE6VP5150NR1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image MRF6V2150NR1 NXP Semiconductors

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270

Part Image MRF6V2150N NXP Semiconductors

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA