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MRFE6VP61K25HR5 - NXP

Description: NXP - MRFE6VP61K25HR5 - RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230

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MRFE6VP61K25HR5 Details

  • Manufacturer Part Number:

    MRFE6VP61K25HR5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTED

  • Case Connection:

    SOURCE

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    125 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.8 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-CDFM-F4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1300 W

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VP61K25HR5 Frequently Asked Questions (FAQs)

  • The MRFE6VP61K25HR5 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 120°C for optimal performance.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet. Typically, a voltage supply of 12-28V and a current limit of 1.5A is recommended.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and thermal vias. Ensure good thermal conductivity by using a heat sink and thermal interface material. Follow the recommended PCB layout guidelines in the datasheet.
  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation and ensure all tools and equipment are grounded.
  • Use a soldering iron with a temperature range of 250-260°C and a solder with a melting point of 217-220°C. Follow the recommended soldering and assembly guidelines in the datasheet.

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MRFE6VP61K25HR5 Overview

Use the download button to access the MRFE6VP61K25HR5 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image MRFE6VP61K25HR6 NXP Semiconductors

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET