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MRFE6VP6300HR3 - NXP

Description: Transistor RF FET NCH 130V 18MHz to 600MHz 4Pin NI780 TR

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MRFE6VP6300HR3 Details

  • Manufacturer Part Number:

    MRFE6VP6300HR3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTED

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    130 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.8 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-CDFM-F4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    225 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRFE6VP6300HR3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MRFE6VP6300HR3 is -40°C to +150°C.
  • To optimize performance, ensure proper thermal management, use a low-loss PCB material, and optimize the input and output matching networks. Additionally, consider using a heat sink and thermal interface material to reduce thermal resistance.
  • The recommended biasing scheme for the MRFE6VP6300HR3 is a single-supply voltage (Vdd) of 28-32V, with a quiescent current (Idq) of 120-150mA. The gate voltage (Vg) should be set to 2.5-3.5V.
  • To protect the MRFE6VP6300HR3 from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that the PCB and components are properly grounded. Additionally, use ESD protection devices such as TVS diodes or ESD arrays in the circuit design.
  • The maximum safe operating area (SOA) for the MRFE6VP6300HR3 is defined by the maximum voltage (Vds) of 32V, maximum current (Id) of 6A, and maximum power dissipation (Pd) of 30W.

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MRFE6VP6300HR3 Overview

Use the download button to access the MRFE6VP6300HR3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRFE6, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image MRFE6VP6300HR5 NXP Semiconductors

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET