Part Image

MTD6N15T4 - onsemi

Description: Power MOSFET 150V 6A 300 mOhm Single N-Channel DPAK

Download MTD6N15T4 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MTD6N15T4 - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-15
click to zoom

MTD6N15T4 Details

  • Manufacturer Part Number:

    MTD6N15T4

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MTD6N15T4 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MTD6N15T4 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the MTD6N15T4, this would typically be limited by the maximum junction temperature (Tj) of 150°C, the maximum drain-source voltage (Vds) of 150V, and the maximum drain current (Id) of 6A.
  • To ensure the MTD6N15T4 is properly biased for optimal performance, follow these guidelines: 1) Ensure the gate-source voltage (Vgs) is within the recommended range of 2-4V for normal operation. 2) Use a suitable gate resistor (Rg) to limit the gate current and prevent oscillations. 3) Choose a suitable drain-source voltage (Vds) and drain current (Id) that fall within the device's safe operating area. 4) Ensure the device is properly heatsinked to maintain a safe junction temperature (Tj).
  • For optimal performance and thermal management, follow these PCB layout and thermal management guidelines: 1) Use a multi-layer PCB with a solid ground plane to reduce thermal resistance and electromagnetic interference (EMI). 2) Place the MTD6N15T4 near a heat sink or thermal pad to dissipate heat efficiently. 3) Use thermal vias to connect the device's thermal pad to the heat sink or thermal pad. 4) Keep the PCB traces and components away from the device's thermal pad to minimize thermal resistance. 5) Use a thermal interface material (TIM) with a high thermal conductivity to fill the gap between the device and the heat sink.
  • To protect the MTD6N15T4 from electrostatic discharge (ESD), follow these guidelines: 1) Handle the device by the body or use an ESD wrist strap to prevent static buildup. 2) Use ESD-safe packaging and storage materials. 3) Use an ESD protection device, such as a TVS diode or ESD protection IC, in the circuit. 4) Ensure the PCB has a solid ground plane and is properly connected to a grounding point. 5) Avoid touching the device's pins or exposed metal surfaces during handling or assembly.
  • The reliability and lifetime expectations for the MTD6N15T4 depend on various factors, including operating conditions, environmental factors, and manufacturing quality. However, onsemi provides reliability data and guidelines in the device's datasheet and application notes. Typically, the MTD6N15T4 is expected to have a high reliability and long lifetime when operated within its recommended specifications and under normal environmental conditions.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MTD6N15T4 Overview

Use the download button to access the MTD6N15T4 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like MTD6N, or try a keyword search, such as Power Field-Effect Transistors

Parts related to MTD6N15T4

Showing 0 results

MTD6N15T4 Alternates

Showing results

Image Part Number Model
Part Image MTD6N15 Silicon360

Power Field-Effect Transistor, 6A I(D), 150V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image MTD6N15 onsemi

Power Field-Effect Transistor, 6A I(D), 150V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252