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NLVHC1G08DFT1G - onsemi

Description: High Speed: tPD = 7ns (Typ) at VCC = 5V; Low Power Dissipation: ICC = 1mA (Max) at TA = 25°C; High Noise Immunity; Balanced Propagation Delays (tpLH = tpHL); Symmetrical Output Impedance (IOH = IOL = 2mA); Chip Complexity: FET = 44; Equivalent Gate = 11; Pb-Free Packages are Available; Designed for 2.0 V to 6.0 V Vcc Operation Wide Operating Vcc Range

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NLVHC1G08DFT1G Overview

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