NP100P06PLG-E2-AY - Renesas Electronics

Description: The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

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Image	Part Number	Model
	NP100P06PDG-E1-AY Renesas Electronics Corporation Power Field-Effect Transistor, 100A I(D), 60V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	NP100P06PDG Renesas Electronics Corporation Power Field-Effect Transistor, 100A I(D), 60V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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NP100P06PLG-E2-AY - Renesas Electronics

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Aluminium Electrolytic Capacitor

Axial Diameter Horizontal Mount

BGA

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Dual-In-Line Sockets

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Header, Shrouded

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QFN

QFP-PLCC

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SIL-MIL

Small Outline Diode

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Transistor Outline, Vertical

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NP100P06PLG-E2-AY Alternates