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NTD3055-094T4G - onsemi

Description: Lower RDS(on); Lower VDS(on); Lower and Tighter VSD; Lower Diode Reverse Recovery Time; Lower Reverse Recovery Stored Charge; RoHS Compliant

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NTD3055-094T4G Details

  • Manufacturer Part Number:

    NTD3055-094T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    61 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.094 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD3055-094T4G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the recommended junction temperature (Tj) range of -55°C to 150°C. Use a heat sink or thermal interface material to maintain a safe junction temperature.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage.
  • Yes, the NTD3055-094T4G is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly snubbed and the PCB layout is optimized for high-frequency operation.
  • Use an ESD wrist strap or mat when handling the device. Ensure that the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

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NTD3055-094T4G Overview

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Part Image NTD3055-094 onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET