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NTMFS4C025NT1G - onsemi

Description: Low RDS(on) to Minimize Conduction Losses; Low Capacitance to Minimize Driver Losses; Optimized Gate Charge to Minimize Switching Losses; RoHS Compliant

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NTMFS4C025NT1G Details

  • Manufacturer Part Number:

    NTMFS4C025NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Date Of Intro:

    2016-08-08

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    68 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.00341 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30.5 W

  • Pulsed Drain Current-Max (IDM):

    166 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4C025NT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NTMFS4C025NT1G is a 2.5mm x 2.5mm QFN package with a 0.5mm pitch. A minimum of 4 layers is recommended for optimal thermal performance.
  • To ensure reliable operation of NTMFS4C025NT1G in high-temperature environments, it is recommended to follow proper thermal design guidelines, including using a heat sink, thermal interface material, and ensuring good airflow. Additionally, derating the device's power dissipation is recommended for high-temperature operation.
  • The maximum allowed voltage on the input pins of NTMFS4C025NT1G is 5.5V. Exceeding this voltage may cause permanent damage to the device.
  • To handle ESD protection for NTMFS4C025NT1G, it is recommended to follow proper ESD handling procedures, including using ESD-safe materials, grounding straps, and wrist straps. Additionally, using ESD protection devices such as TVS diodes or ESD arrays can help protect the device from ESD events.
  • The recommended storage temperature range for NTMFS4C025NT1G is -40°C to 125°C. Storage outside of this range may affect the device's reliability and performance.

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NTMFS4C025NT1G Overview

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Part Image NTMFS4C025NT3G onsemi

Power Field-Effect Transistor, 11A I(D), 30V, 0.00341ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET