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NTP150N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 43 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 121 mΩ

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NTP150N65S3HF - onsemi

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