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NTPF360N80S3Z - onsemi

Description: 900 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 25.3 nC); Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V); Optimized Capacitance; ESD Improved Capability with Zener Diode; Typ. RDS(on) = 300 mΩ; RoHS Compliant; 100% Avalanche Tested; Internal Gate Resistance: 4 Ω

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NTPF360N80S3Z - onsemi

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