NTTFS4C05NTWG - onsemi

Description: Low RDS(on) to Minimize Conduction Losses; Low Capacitance to Minimize Driver Losses; Optimized Gate Charge to Minimize Switching Losses; RoHS Compliant

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Image	Part Number	Model
	NTTFS4C05NTAG onsemi Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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NTTFS4C05NTWG - onsemi

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Aluminium Electrolytic Capacitor

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