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NVD6824NLT4G-VF01 - onsemi

Description: Low RDS(on); AEC-Q101 qualified; Avalanche Energy Specified; RoHS Compliant; High Current Capability

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NVD6824NLT4G-VF01 - onsemi PCB footprint - Other - Other - DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE B_1
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NVD6824NLT4G-VF01 Details

  • Manufacturer Part Number:

    NVD6824NLT4G-VF01

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DPAK-3

  • Manufacturer Package Code:

    369AA

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    41 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    133 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    238 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVD6824NLT4G-VF01 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
  • Ensure proper thermal management, use a heat sink or thermal pad, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The NVD6824NLT4G-VF01 has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and use ESD-protective packaging. For latch-up prevention, ensure proper power sequencing and decoupling.
  • Yes, the NVD6824NLT4G-VF01 is AEC-Q100 qualified and suitable for automotive and high-reliability applications. However, ensure that you follow the recommended operating conditions and design guidelines.
  • Follow the test procedures outlined in the datasheet and application notes. Perform thorough validation testing, including functional, parametric, and environmental testing, to ensure the device meets your specific application requirements.

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NVD6824NLT4G-VF01 Overview

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Part Image NVD6824NLT4G onsemi

Power Field-Effect Transistor, 41A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET