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NVMFD5875NLWFT1G - onsemi

Description: Low rDS(on) to Minimize Conduction Loss; Low Capacitance to Minimize Driver Losses; NVMFD5875NLWF − Wettable Flanks Option for Enhanced Optical Inspection; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD5875NLT1G onsemi

Power Field-Effect Transistor, 7A I(D), 60V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

NVMFD5875NLWFT3G onsemi

Power Field-Effect Transistor, 7A I(D), 60V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET


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Image	Part Number	Model
	NVMFD5875NLT1G onsemi Power Field-Effect Transistor, 7A I(D), 60V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	NVMFD5875NLWFT3G onsemi Power Field-Effect Transistor, 7A I(D), 60V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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NVMFD5875NLWFT1G - onsemi

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