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NVMFS5C460NT1G - onsemi

Description: Small Footprint (5 x 6 mm); Low RDS(on); Low Qg and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C460NT1G Details

  • Manufacturer Part Number:

    NVMFS5C460NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1667 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    71 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    352 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C460NT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C460NT1G is -40°C to 125°C.
  • To ensure data integrity during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The maximum number of erase cycles for NVMFS5C460NT1G is 100,000 cycles.
  • No, NVMFS5C460NT1G is not designed for use in radiation-intensive environments. If you need a radiation-hardened device, you should consider a different part number.
  • In the event of a page erase error, the device will set the ESTAT register to indicate the error. The host should retry the erase operation up to a maximum of 3 times before considering the device faulty.

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NVMFS5C460NT1G Overview

Use the download button to access the NVMFS5C460NT1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

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Part Image NVMFS5C460NLWFT1G onsemi

Power Field-Effect Transistor, 78A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C460NWFT1G onsemi

Power Field-Effect Transistor, 71A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Power Field-Effect Transistor, 78A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C460NLWFAFT3G onsemi

Power Field-Effect Transistor, 78A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C460NLT1G onsemi

Power Field-Effect Transistor, 78A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for NVMFS5C460NT1G, check out Findchips.com