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NVMFS5C645NLWFT1G - onsemi

Description: Low RDS(on); Low QG and Gate capacitance; Industry standard 5x6mm package Industry; NVMFS5C645NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C645NLWFT1G Details

  • Manufacturer Part Number:

    NVMFS5C645NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    185 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    820 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C645NLWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for the NVMFS5C645NLWFT1G can be found in the onsemi application note AND9005/D, which provides guidelines for PCB design, thermal management, and layout considerations to ensure optimal performance and reliability.
  • The NVMFS5C645NLWFT1G has built-in fault detection and protection mechanisms, such as over-temperature protection, over-voltage protection, and under-voltage lockout. However, additional external circuitry may be required to detect and respond to faults. onsemi recommends consulting the device datasheet and application notes for guidance on implementing fault detection and protection mechanisms.
  • The recommended operating conditions for the NVMFS5C645NLWFT1G are specified in the datasheet, including temperature range, voltage supply, and current limits. Operating the device outside of these conditions can impact performance, reliability, and lifespan. It is essential to ensure that the device is operated within the recommended conditions to guarantee optimal performance and reliability.
  • To ensure EMC and EMI compliance, onsemi recommends following the guidelines outlined in the device datasheet and application notes, as well as industry standards such as IEC 61000-4 and CISPR 25. Additionally, proper PCB design, layout, and shielding can help minimize EMI and ensure EMC compliance.
  • The NVMFS5C645NLWFT1G is a sensitive electronic component that requires proper handling and storage to prevent damage. onsemi recommends following the guidelines outlined in the device datasheet and industry standards such as IPC-A-610 and IPC-J-STD-001 for handling, storage, and assembly to prevent damage and ensure reliability.

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NVMFS5C645NLWFT1G Overview

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