Part Image

PHB18NQ10T,118 - Nexperia

Description: --

Download PHB18NQ10T,118 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
PHB18NQ10T,118 - Nexperia  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

PHB18NQ10T,118 Details

  • Manufacturer Part Number:

    PHB18NQ10T,118

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    D2PAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT404

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Avalanche Energy Rating (Eas):

    70 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    61 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PHB18NQ10T,118 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PHB18NQ10T,118 is a standard SOT223 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • Yes, PHB18NQ10T,118 is rated for operation up to 150°C, but it's essential to ensure proper thermal management and follow the recommended derating guidelines to prevent overheating.
  • To ensure reliability, follow the recommended voltage derating guidelines, use proper PCB layout and spacing, and consider adding protective components such as TVS diodes or resistors to prevent overvoltage and ESD damage.
  • Yes, PHB18NQ10T,118 is compatible with lead-free soldering processes, but it's essential to follow the recommended soldering profile and temperature guidelines to prevent damage to the device.
  • Yes, PHB18NQ10T,118 is suitable for switching regulator applications due to its low RDS(on) and high current capability, but it's essential to ensure proper gate drive and layout to minimize switching losses and prevent overheating.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

PHB18NQ10T,118 Overview

Use the download button to access the PHB18NQ10T,118 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PHB18, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

Parts related to PHB18NQ10T,118

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

PHB18NQ10T,118 Alternates

Showing results

Image Part Number Model
Part Image PHB18NQ10T,118 NXP Semiconductors

Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image PHB18NQ10T/T3 NXP Semiconductors

Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 934055699118 NXP Semiconductors

Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image PHB18NQ10T Nexperia

Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 934055699118 Nexperia

Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for PHB18NQ10T,118, check out Findchips.com