Part Image

PHD101NQ03LT,118 - Nexperia

Description: --

Download PHD101NQ03LT,118 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
PHD101NQ03LT,118 - Nexperia  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

PHD101NQ03LT,118 Details

  • Manufacturer Part Number:

    PHD101NQ03LT,118

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK

  • Package Description:

    PLASTIC, SC-63, DPAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT428

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    185 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    225 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    166 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PHD101NQ03LT,118 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for PHD101NQ03LT,118 is a standard SOT23 package with a 1.3 mm x 1.3 mm body size. The recommended land pattern is available in the Nexperia's SOT23 package outline drawing.
  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, ensure good thermal design, and consider the device's thermal resistance (Rth(j-a) = 240 K/W). Additionally, Nexperia recommends using a thermal pad or heat sink to improve heat dissipation.
  • Although the datasheet specifies a maximum input voltage of 5.5 V, it's recommended to limit the input voltage to 5 V to ensure reliable operation and prevent damage to the device.
  • The PHD101NQ03LT,118 is a low-dropout linear voltage regulator (LDO) and not suitable for use as a switch. It's designed to provide a stable output voltage with a low dropout voltage, but it's not intended for switching applications.
  • The output voltage tolerance of the PHD101NQ03LT,118 can be calculated by considering the initial output voltage tolerance (±2%) and the temperature coefficient of the output voltage (±0.5%/°C). The total output voltage tolerance can be calculated by adding these two values.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

PHD101NQ03LT,118 Overview

Use the download button to access the PHD101NQ03LT,118 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PHD10, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

Parts related to PHD101NQ03LT,118

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

PHD101NQ03LT,118 Alternates

Showing results

Image Part Number Model
Part Image PHD101NQ03LT,118 NXP Semiconductors

Power Field-Effect Transistor, 75A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image PHD101NQ03LT NXP Semiconductors

Power Field-Effect Transistor, 75A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image PHD101NQ03LT Nexperia

Power Field-Effect Transistor, 75A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image 934057029118 Nexperia

Power Field-Effect Transistor, 75A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252