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PSMN9R0-30YL,115 - Nexperia

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PSMN9R0-30YL,115 Details

  • Manufacturer Part Number:

    PSMN9R0-30YL,115

  • Brand Name:

    Nexperia

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC

  • Package Description:

    SMALL OUTLINE, R-PSSO-G4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    16 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    55 A

  • Drain-source On Resistance-Max:

    0.0138 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    223 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PSMN9R0-30YL,115 Frequently Asked Questions (FAQs)

  • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow NXP's recommended thermal design guidelines. Also, consider derating the device's power handling at high temperatures.
  • Although the datasheet doesn't specify a maximum gate voltage, NXP recommends keeping it below 20V to prevent damage to the internal gate oxide. Exceeding this voltage may lead to device failure.
  • Yes, but be aware that the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency operation. Consult NXP's application notes for guidance on high-frequency design considerations.
  • Implement a dead-time or delay between the turn-off of one MOSFET and the turn-on of the other in a half-bridge configuration. This prevents simultaneous conduction and reduces shoot-through current.

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PSMN9R0-30YL,115 Overview

Use the download button to access the PSMN9R0-30YL,115 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image PSMN9R0-30YL NXP Semiconductors

Power Field-Effect Transistor, 61A I(D), 30V, 0.01103ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Part Image PSMN9R0-30YL,115 NXP Semiconductors

Power Field-Effect Transistor, 55A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Part Image PSMN9R0-30YL Nexperia

Power Field-Effect Transistor, 61A I(D), 30V, 0.01103ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235