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PTPS7H6003HBX01/EM - Texas Instruments

Description: Radiation-hardness-assured GaN FET gate driver (22V/60V/200V options), 1.3A source / 2.5A sink, 30ns delay, 5.5ns matching, adjustable dead time, SEL/SEB/SEGR immune up to LET 75 MeV·cm²/mg, for space-grade power systems.

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PTPS7H6003HBX01/EM - Texas Instruments

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