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RGP10G - onsemi

Description: High temperature metallurgically bonded construction. ; Typical IR less than 1µA. ; 1.0 ampere operation at TA = 55°C with no thermal runaway. ; Fast switching for high efficiency.; Glass passivated cavity-free junction.

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RGP10G Overview

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Image	Part Number	Model
	HER105H05 Rectron Semiconductor Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
	FR104GH01 Rectron Semiconductor Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
	UF1GHR0 Taiwan Semiconductor Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL
	1N4004 International Semiconductor Inc Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
	RGP10GHE3/54 Vishay Intertechnologies Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL
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