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RGP10K - onsemi

Description: Typical IR less than 1µA. ; High temperature metallurgically bonded construction. ; Fast switching for high efficiency.; 1.0 ampere operation at TA = 55°C with no thermal runaway. ; Glass passivated cavity-free junction.

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RGP10K Overview

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RGP10K Alternates

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Image	Part Number	Model
	1N4006G-K Taiwan Semiconductor Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL
	FR106GH08 Rectron Semiconductor Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-41
	RGP10KH Zowie Technology Corp Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL
	UF4006PBFREE Central Semiconductor Corp Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-41
	FR106GPT CHENMKO Enterprise Co Ltd Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-41
For a full list of alternate parts for RGP10K, check out Findchips.com