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RGP10M - onsemi

Description: Glass passivated cavity-free junction. ; Fast switching for high efficiency.; 1.0 ampere operation at TA = 55°C with no thermal runaway. ; High temperature metallurgically bonded construction. ; Typical IR less than 1µA.

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RGP10M Overview

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Image	Part Number	Model
	UF1007 Vishay Intertechnologies Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41
	BA159GA0G Taiwan Semiconductor Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL
	1N3957GP-E3/54 Vishay Semiconductors Diode Switching 1KV 1A 2-Pin DO-204AL T/R
	1N4948 Changzhou Starsea Electronics Co Ltd Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41
	HER108-T Micro Commercial Components Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41
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