RRP68151-NH0 - Renesas Electronics
Description: The RRP68150 and RRP68151 are 5V-powered, high-frequency half-bridge drivers optimized for enhancement-mode GaN FETs and low-threshold N-channel MOSFETs. They deliver 2A source and 5.3A sink current capability, supporting a switching node up to 100V DC. The drivers’ PWM inputs are compatible with 3.3V/5V CMOS logic and can tolerate up to 14V, independent of the VDD supply. The high-side bias voltage uses a bootstrap technique and is internally clamped at 5.4V to prevent exceeding the GaN FET’s maximum gate-
ECAD model is currently unavailable for this part
