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SBRV660VCTT4G - onsemi

Description: Extremely Fast Switching; Extremely Low Forward Drop; Platinum Barrier with Avalanche Guardrings Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Marking: B620T, B630T, B640T, B650T, B660T; NRVBD and SBR Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Re

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MBRD660CTT4 onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon

MBRD660CT Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA

MBRD660CTTRR Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA

MBRD660CTTR Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA

NRVBD660CTG-VF01 onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA

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Image	Part Number	Model
	MBRD660CTT4 onsemi Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon
	MBRD660CT Vishay Intertechnologies Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA
	MBRD660CTTRR Vishay Intertechnologies Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA
	MBRD660CTTR Vishay Intertechnologies Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA
	NRVBD660CTG-VF01 onsemi Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA
For a full list of alternate parts for SBRV660VCTT4G, check out Findchips.com

SBRV660VCTT4G - onsemi

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Aluminium Electrolytic Capacitor

Axial Diameter Horizontal Mount

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SBRV660VCTT4G Alternates