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SI2305DS - Vishay

Description: SI2305DS

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PCB Footprints
SI2305DS - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - Si2347DS-T1-GE3
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3D Models
SI2305DS - Vishay  - 3D model - SOT23 (3-Pin) - Si2347DS-T1-GE3
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SI2305DS Details

  • Manufacturer Part Number:

    SI2305DS

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.25 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

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SI2305DS Overview

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Part Image SI2305DS Vishay Siliconix

Transistor

Part Image SI2305DS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236