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SI3443DV - onsemi

Description: P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -4A, 65mΩ

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SI3443DV - onsemi  - 3D model
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SI3443DV Details

  • Manufacturer Part Number:

    SI3443DV

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    97 ns

  • Turn-on Time-Max (ton):

    50 ns

SI3443DV Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider the device's power dissipation and thermal resistance.
  • Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and follow proper PCB layout and grounding techniques. Also, consider using EMI filters or shielding components.
  • Use a low-ESR capacitor for the output filter, minimize the PCB trace length and inductance, and ensure proper decoupling and bypassing. Also, consider using a shielded enclosure and following proper RF design practices.
  • Use a high-bandwidth oscilloscope and a low-capacitance probe to measure the output voltage and current. Also, consider using a spectrum analyzer to measure the device's noise and distortion performance.

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SI3443DV Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like SI344, or try a keyword search, such as Power Field-Effect Transistors

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