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SI3458BDV-T1-E3 - Vishay

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Part Image BL4P06G-6L Galaxy Microelectronics

Power Field-Effect Transistor, 4A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI3458BDV-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 4.1A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI3458BDV-T1-BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 4.1A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET