Part Image

SI4482DY - Vishay

Description: MOSFET 100V 4.6A 2.5W

Download SI4482DY Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI4482DY - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
click to zoom
3D Models
SI4482DY - Vishay  - 3D model - Small Outline Packages - SO8
click to zoom

SI4482DY Details

  • Manufacturer Part Number:

    SI4482DY

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    4.6 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

SI4482DY Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance includes a large copper area on the top and bottom layers, connected to the thermal pad of the SI4482DY. This helps to dissipate heat efficiently. Additionally, it's recommended to use thermal vias to connect the top and bottom layers, and to keep the PCB traces away from the thermal pad to minimize thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, ensure proper thermal design, including a heat sink if necessary, and consider derating the device's power handling at high temperatures. It's also crucial to follow the recommended soldering and assembly procedures to prevent thermal stress.
  • The maximum allowed voltage on the gate-source pin (Vgs) is ±20V. Exceeding this voltage can damage the device. It's essential to ensure that the gate driver or control circuitry does not exceed this voltage limit.
  • To protect the SI4482DY from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes, in the circuit design.
  • The recommended gate resistance (Rg) for optimal switching performance is typically in the range of 10Ω to 20Ω. This helps to minimize ringing and oscillations during switching transitions. However, the optimal value may vary depending on the specific application and circuit design.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI4482DY Overview

Use the download button to access the SI4482DY schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI448, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI4482DY

Showing 0 results