Part Image

SI7119DN-T1-E3 - Vishay

Description: P-Channel 200 V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Download SI7119DN-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
SI7119DN-T1-E3 - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

SI7119DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7119DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    1.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7119DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7119DN-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5 V and 5.5 V, and the enable pin (EN) to a logic-level signal or a pull-up resistor to VIN. Also, ensure the output pin (VOUT) is decoupled with a 1 μF ceramic capacitor.
  • The SI7119DN-T1-E3 can deliver up to 1 A of output current, but it's recommended to limit the output current to 500 mA for optimal performance and thermal management.
  • To manage thermal performance, ensure good airflow around the device, use a thermal pad or heat sink, and avoid operating the device near its maximum junction temperature (150°C).
  • Yes, the SI7119DN-T1-E3 is AEC-Q100 qualified, making it suitable for automotive applications. However, ensure compliance with specific automotive standards and regulations.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

SI7119DN-T1-E3 Overview

Use the download button to access the SI7119DN-T1-E3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI711, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7119DN-T1-E3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

SI7119DN-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI7119DN-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 1.2A I(D), 200V, 1.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7119DN-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 1.2A I(D), 200V, 1.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET