SI7629DN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SI7629DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212- 8

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3D Models

SI7629DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212- 8

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SI7629DN-T1-GE3
Part Number SI7629DN-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (P-Channel)
Package Category Other
Footprint Name Other - PowerPAK® 1212- 8
Released Date Aug 22, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SI7629DN-T1-GE3 Details

Manufacturer Part Number:
SI7629DN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
Package Description:
HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
20 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
20 V
Drain Current-Max (ID):
35 A
Drain-source On Resistance-Max:
0.0046 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-XDSO-C5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
52 W
Pulsed Drain Current-Max (IDM):
80 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SI7629DN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI7629DN-T1-GE3 is a 5x5 mm QFN package with a 0.5 mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal vias, and ensuring good airflow around the device.
The SI7629DN-T1-GE3 has built-in ESD protection, but it is still recommended to follow proper ESD handling and storage procedures to prevent damage to the device. A human body model (HBM) of ±2 kV and a charged device model (CDM) of ±500 V are recommended.
Yes, the SI7629DN-T1-GE3 is AEC-Q100 qualified and suitable for use in automotive applications. However, it is recommended to consult with Vishay Intertechnologies for specific application requirements and to ensure compliance with relevant automotive standards.
The SI7629DN-T1-GE3 should be stored in a dry, cool place, away from direct sunlight and moisture. It is recommended to follow standard IC handling and storage procedures, including the use of anti-static packaging and handling equipment.

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SI7629DN-T1-GE3 Overview

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SI7629DN-T1-GE3 - Vishay

SI7629DN-T1-GE3 Details

SI7629DN-T1-GE3 Frequently Asked Questions (FAQs)

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