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SI7633DP-T1-GE3 - Vishay

Description: MOSFET -20V Vds 20V Vgs PowerPAK SO-8

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PCB Footprints
SI7633DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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3D Models
SI7633DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SI7633DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7633DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    ROHS COMPLIANT, POWERPAK, SO-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    31 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7633DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7633DP-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 1.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor.
  • The SI7633DP-T1-GE3 is capable of delivering up to 300mA of output current. However, it's recommended to limit the output current to 200mA for optimal performance and thermal management.
  • To ensure reliable operation, it's essential to provide adequate thermal management. A thermal pad on the PCB can help dissipate heat. Additionally, ensure good airflow around the device and avoid blocking the thermal pad with components or soldermask.
  • Yes, the SI7633DP-T1-GE3 is AEC-Q100 qualified, making it suitable for automotive applications. However, it's essential to consult the datasheet and application notes for specific requirements and guidelines.

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SI7633DP-T1-GE3 Overview

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