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SI7634BDP-T1-GE3 - Vishay

Description: MOSFET 30V Vds 20V Vgs PowerPAK SO-8

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SI7634BDP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7634BDP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    22.5 A

  • Drain-source On Resistance-Max:

    0.0054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

SI7634BDP-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its specified operating temperature range.
  • The recommended soldering conditions for the SI7634BDP-T1-GE3 are a peak temperature of 260°C, a dwell time of 10-30 seconds, and a soldering process that follows the IPC J-STD-020D standard.
  • While the SI7634BDP-T1-GE3 is a high-performance device, it's essential to consult with Vishay Intertechnologies or a qualified representative to determine its suitability for high-reliability or aerospace applications, as additional testing and qualification may be required.
  • To troubleshoot issues related to the device's internal ESD protection, it's recommended to follow a structured approach, including visual inspection, electrical testing, and analysis of the device's operating conditions, to identify the root cause of the issue.

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SI7634BDP-T1-GE3 Overview

Use the download button to access the SI7634BDP-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI763, or try a keyword search, such as Power Field-Effect Transistors

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Part Image SI7634BDP-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 22.5A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7634BDP-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 22.5A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET