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SI7846DP-T1-GE3 - Vishay

Description: N-Channel 150 V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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SI7846DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7846DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    30

SI7846DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7846DP-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
  • The recommended input capacitance for the SI7846DP-T1-GE3 is 10nF to 100nF. This range provides a good balance between noise filtering and signal integrity.
  • Yes, the SI7846DP-T1-GE3 is suitable for high-reliability applications. It is built with high-reliability materials and manufacturing processes, and is qualified to automotive and industrial standards.
  • To troubleshoot issues with the SI7846DP-T1-GE3, start by verifying the device's pinout and connections. Check for proper power supply, input signals, and output loading. Use oscilloscopes and logic analyzers to debug signal integrity issues.

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SI7846DP-T1-GE3 Overview

Use the download button to access the SI7846DP-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image SI7846DP-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor

Part Image SI7846DP-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7846DP-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET