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SI7858ADP-T1-E3 - Vishay

Description: MOSFET 12V 29A 0.0026Ohm

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SI7858ADP-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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SI7858ADP-T1-E3 Details

  • Manufacturer Part Number:

    SI7858ADP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Moisture Sensitivity Level:

    1

  • Qualification Status:

    Not Qualified

  • Terminal Finish:

    Matte Tin (Sn)

SI7858ADP-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB layout and land pattern can be found in the Vishay application note 'Land Pattern Recommendation for QFN Packages' (document number: 81011). It provides guidelines for optimal thermal and electrical performance.
  • To ensure the device operates within the recommended junction temperature range, it's essential to provide adequate heat sinking and thermal management. This can be achieved by using a heat sink, thermal interface material, and ensuring good airflow around the device.
  • The SI7858ADP-T1-E3 is an ESD-sensitive device. Handle the device by the body, avoid touching the pins, and use an ESD wrist strap or mat. Store the device in an anti-static bag or container. Follow standard ESD handling precautions to prevent damage.
  • The SI7858ADP-T1-E3 is an automotive-grade device, suitable for high-reliability applications. However, it's essential to review the device's AEC-Q100 qualification and PPAP (Production Part Approval Process) documentation to ensure it meets the specific requirements of your application.
  • Follow the soldering and rework guidelines outlined in the JEDEC standard J-STD-020D.1. The recommended soldering temperature is 260°C (peak temperature) with a soldering time of 10-30 seconds. For rework, use a low-temperature soldering iron and follow the manufacturer's guidelines.

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SI7858ADP-T1-E3 Overview

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Power Field-Effect Transistor

Part Image SI7858DP-T1 Vishay Intertechnologies

Power Field-Effect Transistor, 18A I(D), 12V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET