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SI7880ADP-T1-E3 - Vishay

Description: MOSFETs 30V 40A 83W

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SI7880ADP-T1-E3 Details

  • Manufacturer Part Number:

    SI7880ADP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7880ADP-T1-E3 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a large copper area to dissipate heat efficiently.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator or a stable voltage source is recommended to power the device. Additionally, a bias resistor and capacitor are required to set the operating point of the device.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. It is recommended to handle the device in an ESD-protected environment, and to use ESD-protective packaging and handling materials.
  • To troubleshoot issues with the device, it is recommended to check the power supply voltage, input signals, and output signals using an oscilloscope or logic analyzer. Additionally, checking the device's thermal performance and ensuring proper PCB layout can help identify the root cause of the issue.
  • Yes, for high-frequency applications, it is recommended to use a low-inductance PCB layout, minimize trace lengths, and use a ground plane to reduce electromagnetic interference (EMI). Additionally, a decoupling capacitor is recommended to filter out high-frequency noise.

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SI7880ADP-T1-E3 Overview

Use the download button to access the SI7880ADP-T1-E3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI788, or try a keyword search, such as Power Field-Effect Transistors

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