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SIA911ADJ-T1-GE3 - Vishay

Description: MOSFET 20V 4.5A 6.5W

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SIA911ADJ-T1-GE3 - Vishay PCB footprint - Other - Other - SIA911ADJ-T1-GE3-3
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SIA911ADJ-T1-GE3 - Vishay  - 3D model - Other - SIA911ADJ-T1-GE3-3
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SIA911ADJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA911ADJ-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.116 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    6.5 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIA911ADJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIA911ADJ-T1-GE3 is a standard 1206 package with a land pattern of 1.7mm x 0.8mm, with a non-solder mask defined (NSMD) pad to ensure proper thermal performance.
  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, provide adequate heat sinking, and ensure the device is operated within its specified temperature range (−55°C to +150°C). Additionally, consider using a thermally conductive interface material to improve heat transfer between the device and the PCB or heat sink.
  • The maximum allowable voltage for the SIA911ADJ-T1-GE3 is 10V, as specified in the datasheet. Exceeding this voltage may result in device damage or failure.
  • While the SIA911ADJ-T1-GE3 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz. However, it's essential to consider the device's parasitic capacitance and inductance, as well as the PCB layout, to minimize signal degradation and ensure proper performance.
  • To prevent ESD damage, handle the SIA911ADJ-T1-GE3 with proper ESD protection, such as using an ESD wrist strap, mat, or workstation. Ensure that the device is stored in its original packaging or an ESD-safe container when not in use. During assembly, follow proper ESD handling procedures, and consider using ESD-protective equipment, such as ESD-safe tweezers or vacuum pickups.

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SIA911ADJ-T1-GE3 Overview

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