Part Image

SIHF9520S-GE3 - Vishay

Description: MOSFET 100V Vds 20V Vgs D2PAK (TO-263)

Download SIHF9520S-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
SIHF9520S-GE3 - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

SIHF9520S-GE3 Details

  • Manufacturer Part Number:

    SIHF9520S-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    30 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.8 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHF9520S-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIHF9520S-GE3 is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a soldering flux to the pads. The recommended soldering time is 2-3 seconds per pad.
  • The maximum operating temperature range for the SIHF9520S-GE3 is -40°C to 150°C, with a derating of 1.33% per °C above 125°C.
  • Yes, the SIHF9520S-GE3 is designed to withstand high-vibration environments. However, it's recommended to follow the manufacturer's guidelines for vibration testing and to ensure proper PCB mounting and soldering.
  • To handle ESD protection for the SIHF9520S-GE3, use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment. The device has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM).

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

SIHF9520S-GE3 Overview

Use the download button to access the SIHF9520S-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIHF9, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIHF9520S-GE3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

SIHF9520S-GE3 Alternates

Showing results

Image Part Number Model
Part Image SIHF9520S-GE3 Vishay Siliconix

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9520SPBF Vishay Intertechnologies

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9520STRLPBF Vishay Intertechnologies

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9520STRRPBF Vishay Intertechnologies

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF9520STRL International Rectifier

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for SIHF9520S-GE3, check out Findchips.com