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SIHFRC20TR-GE3 - Vishay

Description: MOSFET MOSFET N-CHANNEL 600V

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SIHFRC20TR-GE3 - Vishay  - 3D model
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SIHFRC20TR-GE3 Details

  • Manufacturer Part Number:

    SIHFRC20TR-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFRC20TR-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIHFRC20TR-GE3 is a rectangular pad with dimensions of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a solder flux to the pads. The recommended soldering time is 2-3 seconds per pad.
  • The maximum operating temperature range for the SIHFRC20TR-GE3 is -55°C to 150°C, with a derating of 1.33% per °C above 125°C.
  • Yes, the SIHFRC20TR-GE3 is designed to withstand high-vibration environments. However, it's recommended to follow Vishay's guidelines for vibration testing and to ensure proper PCB mounting and soldering.
  • To handle ESD protection, use a wrist strap or mat, and ensure that the PCB is properly grounded. It's also recommended to use ESD-sensitive handling and storage procedures.

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SIHFRC20TR-GE3 Overview

Use the download button to access the SIHFRC20TR-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIHFR, or try a keyword search, such as Power Field-Effect Transistors

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Part Image SIHFRC20-GE3 Vishay Siliconix

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Part Image IRFRC20PBF Vishay Siliconix

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Part Image IRFRC20TRRPBF International Rectifier

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFRC20TRR Vishay Siliconix

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for SIHFRC20TR-GE3, check out Findchips.com