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SIHP5N50D-GE3 - Vishay

Description: Vishay SIHP5N50D-GE3 N-channel MOSFET Transistor, 5.3 A, 500 V, 3-Pin TO-220AB

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SIHP5N50D-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHP5N50D-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-2020
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3D Models
SIHP5N50D-GE3 - Vishay - 3D model - Transistor Outline, Vertical - TO-220-2020
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SIHP5N50D-GE3 Details

  • Manufacturer Part Number:

    SIHP5N50D-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    23 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHP5N50D-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHP5N50D-GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a solder flux to the pins. Avoid applying excessive force or pressure to the pins during soldering.
  • The maximum allowed voltage derating for SIHP5N50D-GE3 is 80% of the maximum rated voltage, which is 500V. Therefore, the maximum allowed voltage derating is 400V.
  • Yes, SIHP5N50D-GE3 is suitable for high-frequency switching applications up to 100kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation.
  • To calculate the thermal resistance of SIHP5N50D-GE3, use the thermal resistance values provided in the datasheet (RθJC = 1.5°C/W and RθJA = 60°C/W) and consider the specific application's thermal interface material, PCB layout, and airflow conditions.

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SIHP5N50D-GE3 Overview

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