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SIR440DP-T1-GE3 - Vishay

Description: MOSFET 20V Vds 20V Vgs PowerPAK SO-8

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SIR440DP-T1-GE3 - Vishay - PCB symbol
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SIR440DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIR440DP-T1-GE3-4
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SIR440DP-T1-GE3 - Vishay - 3D model - Other - SIR440DP-T1-GE3-4
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SIR440DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR440DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR440DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR440DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's IR Series of Power MOSFETs' (document number 91000).
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet, and consider using a heat sink with a thermal interface material. Additionally, ensure good airflow around the device and avoid blocking the heat sink's airflow path.
  • The maximum allowed voltage transient for the SIR440DP-T1-GE3 is specified in the datasheet as ±20 V for a duration of ≤100 ns. Exceeding this limit may damage the device.
  • While the SIR440DP-T1-GE3 is a high-performance device, it is not specifically designed for high-reliability or aerospace applications. For such applications, consider using devices with specific high-reliability or aerospace certifications, such as those compliant with MIL-PRF-19500 or ESCC 9000.
  • Handle the SIR440DP-T1-GE3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. Ground yourself and the device before handling, and use an ESD-protective wrist strap or mat.

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SIR440DP-T1-GE3 Overview

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