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SIR882DP-T1-GE3 - Vishay

Description: MOSFET 100 Volts 60 Amps 83 Watts

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SIR882DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_11
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SIR882DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR882DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR882DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR882DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for QFN and DFN Packages' (document number 28353).
  • The thermal pad on the SIR882DP-T1-GE3 should be connected to a solid ground plane to ensure optimal thermal performance. A thermal via or a thermal pad connection to the ground plane is recommended.
  • The SIR882DP-T1-GE3 has an operating temperature range of -55°C to 150°C. However, the maximum junction temperature (TJ) should not exceed 150°C.
  • Yes, the SIR882DP-T1-GE3 is suitable for high-reliability applications. It is manufactured using a qualified process and is compliant with the Automotive Electronics Council (AEC) Q100 and Q101 standards.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note 'Soldering Guidelines for QFN and DFN Packages' (document number 28354).

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