Part Image

SIS438DN-T1-GE3 - Vishay

Description: MOSFETs 20V Vds 20V Vgs PowerPAK 1212-8

Download SIS438DN-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
SIS438DN-T1-GE3 - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

SIS438DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS438DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    14.3 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27.7 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS438DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature for SIS438DN-T1-GE3 is -40°C to 125°C.
  • Yes, SIS438DN-T1-GE3 is designed to operate in humid environments, but it's recommended to follow proper handling and storage procedures to prevent moisture-related issues.
  • The maximum allowable voltage for SIS438DN-T1-GE3 is 1.5 times the rated voltage (30V) for a maximum of 10 seconds.
  • Handle SIS438DN-T1-GE3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage.
  • Yes, SIS438DN-T1-GE3 is designed to operate in high-temperature environments up to 150°C, but derating may be necessary for prolonged exposure.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

SIS438DN-T1-GE3 Overview

Use the download button to access the SIS438DN-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIS43, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIS438DN-T1-GE3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview