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SIS468DN-T1-GE3 - Vishay

Description: Vishay SIS468DN-T1-GE3 N-channel MOSFET Transistor, 30 A, 80 V, 8-Pin PowerPAK 1212

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PCB Footprints
SIS468DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8-SINGLE
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3D Models
SIS468DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK-1212-8-SINGLE
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SIS468DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS468DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS468DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIS468DN-T1-GE3 is a standard SOT23 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power dissipation of the SIS468DN-T1-GE3 according to the thermal derating curve provided in the datasheet. Additionally, ensure good thermal conduction between the device and the PCB, and consider using a heat sink if necessary.
  • The maximum allowed voltage on the input pins of the SIS468DN-T1-GE3 is 5.5V. Exceeding this voltage may cause damage to the device.
  • Yes, the SIS468DN-T1-GE3 can be used in switching regulator applications. However, ensure that the device is properly bypassed and decoupled to minimize voltage transients and noise. Additionally, consider the device's power dissipation and thermal characteristics when designing the switching regulator circuit.
  • To prevent ESD damage, handle the SIS468DN-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the workspace is ESD-safe, and avoid touching the device's pins or exposed internal components.

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SIS468DN-T1-GE3 Overview

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